Modeling and Simulation of AlN and#946; Ga2O3 HEMT for RF and High Power Electronics Applications

dc.contributor.guide	Lenka, T. R
dc.coverage.spatial
dc.creator.researcher	Singh, Ranjan
dc.date.accessioned	2023-01-11T06:20:24Z
dc.date.available	2023-01-11T06:20:24Z
dc.date.awarded	2022
dc.date.completed	2022
dc.date.registered	2018
dc.description.abstract	newline
dc.description.note
dc.format.accompanyingmaterial	DVD
dc.format.dimensions
dc.format.extent
dc.identifier.uri	http://hdl.handle.net/10603/441996
dc.language	English
dc.publisher.institution	Electronics and Communication Engineering
dc.publisher.place	Silchar
dc.publisher.university	National Institute of Technology Silchar
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Engineering
dc.subject.keyword	Engineering and Technology
dc.subject.keyword	Engineering Electrical and Electronic
dc.title	Modeling and Simulation of AlN and#946; Ga2O3 HEMT for RF and High Power Electronics Applications
dc.title.alternative
dc.type.degree	Ph.D.