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National Institute of Technology Silchar
Electronics and Communication Engineering
Modeling and Simulation of AlN and#946; Ga2O3 HEMT for RF and High Power Electronics Applications
Modeling and Simulation of AlN and#946; Ga2O3 HEMT for RF and High Power Electronics Applications
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01_title.pdf
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02_prelim.pdf
(405.75 KB)
03_content.pdf
(180.3 KB)
04_abstract.pdf
(138 KB)
05_chapter 1.pdf
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http://hdl.handle.net/10603/441996
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Electronics and Communication Engineering
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