Device engineering of organic field effect transistors for sensing applications

dc.contributor.guide	Iyer, P. K.
dc.coverage.spatial	Nanotechnology
dc.creator.researcher	Dey, Anamika
dc.date.accessioned	2023-04-20T06:56:21Z
dc.date.available	2023-04-20T06:56:21Z
dc.date.awarded	2017
dc.date.completed	2017
dc.date.registered	2013
dc.description.abstract	Considering the demand of future technology the thesis entitled 339 Device Engineering of Organic Field Effect Transistors for Sensing Applications introduces important methodologies which have been developed for improving the performances of OFET The thesis mainly focuses to modify the gate dielectric layer to reduce the operational voltage of both p type and n type OFETs and use them for various sensing applications By modulating gate dielectric layer with the combinations of a high k ino
dc.description.note	Not Available
dc.format.accompanyingmaterial	None
dc.format.dimensions	Not Available
dc.format.extent	Not Available
dc.identifier.uri	http://hdl.handle.net/10603/477602
dc.language	English
dc.publisher.institution	CENTRE FOR NANOTECHNOLOGY
dc.publisher.place	Guwahati
dc.publisher.university	Indian Institute of Technology Guwahati
dc.relation	Not Available
dc.rights	self
dc.source.university	University
dc.subject.keyword	Multidisciplinary
dc.subject.keyword	Nanoscience and Nanotechnology
dc.subject.keyword	Physical Sciences
dc.title	Device engineering of organic field effect transistors for sensing applications
dc.title.alternative	Not available
dc.type.degree	Ph.D.