Device engineering of organic field effect transistors for sensing applications

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Considering the demand of future technology the thesis entitled 339 Device Engineering of Organic Field Effect Transistors for Sensing Applications introduces important methodologies which have been developed for improving the performances of OFET The thesis mainly focuses to modify the gate dielectric layer to reduce the operational voltage of both p type and n type OFETs and use them for various sensing applications By modulating gate dielectric layer with the combinations of a high k ino

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