Atomistic simulation of nanoscale MOSFETs in the ballistic regime of operation

dc.contributor.guide	Mathew, Vincent	en_US
dc.coverage.spatial	Physics	en_US
dc.creator.researcher	James, T George	en_US
dc.date.accessioned	2014-09-25T06:57:15Z
dc.date.available	2014-09-25T06:57:15Z
dc.date.awarded	23/05/2012	en_US
dc.date.completed	15/06/2011	en_US
dc.date.issued	2014-09-25
dc.date.registered	09/01/2007	en_US
dc.description.abstract	newline	en_US
dc.description.note	Bibliography p. 127-140	en_US
dc.format.accompanyingmaterial	None	en_US
dc.format.dimensions		en_US
dc.format.extent	xix, 140p.	en_US
dc.identifier.uri	http://hdl.handle.net/10603/25769
dc.language	English	en_US
dc.publisher.institution	St. Thomas College	en_US
dc.publisher.place	Kottayam	en_US
dc.publisher.university	Mahatma Gandhi University	en_US
dc.relation		en_US
dc.rights	university	en_US
dc.source.university	University	en_US
dc.subject.keyword	Ballistic operation	en_US
dc.subject.keyword	Metal oxide semiconductor field effect transistors	en_US
dc.subject.keyword	MOSFET	en_US
dc.title	Atomistic simulation of nanoscale MOSFETs in the ballistic regime of operation	en_US
dc.title.alternative		en_US
dc.type.degree	Ph.D.	en_US