A study of ionization rate and drift velocity of electron in silicon with variation of field and temperature

dc.contributor.guide	Sharma, Matridutt
dc.coverage.spatial	Science
dc.creator.researcher	Singh, Sumer
dc.date.accessioned	2020-09-07T05:14:25Z
dc.date.available	2020-09-07T05:14:25Z
dc.date.awarded	n.d.
dc.date.completed	2009-10
dc.date.registered	n.d.
dc.description.abstract	newline Abstract not available newline
dc.description.note	Bibliography p. 65-66, Appendix p. 54-64
dc.format.accompanyingmaterial	None
dc.format.dimensions	-
dc.format.extent	66p.
dc.identifier.uri	http://hdl.handle.net/10603/297966
dc.language	English
dc.publisher.institution	Department of Physics
dc.publisher.place	Bikaner
dc.publisher.university	Maharaja Ganga Singh University
dc.relation	No of references 40
dc.rights	university
dc.source.university	University
dc.subject.keyword	Ionization rate
dc.subject.keyword	Physical Sciences
dc.subject.keyword	Physics
dc.subject.keyword	Physics Applied
dc.title	A study of ionization rate and drift velocity of electron in silicon with variation of field and temperature
dc.title.alternative	-
dc.type.degree	M.Phil.