Study of Growth Structure and Electronic Properties of B Tungsten Films for Spintronic Applications

Abstract

Overall, these newlinestudies manifested the formation and stability of and#946;-W with the doping of oxygen, nitrogen, and a newlinefew transition and non-transition metal elements either in order or disordered A15structure. The newlineelectronic structure, especially the energy bands are calculated and analyzed in detailfor checking newlinetheir applicability for spintronic applications. In this aspect, the linear band crossingsand the newlineopening of a gap at those crossings with the inclusion of spin-orbit coupling at or near the Fermi newlinelevel is one of the main quests to propose the compound for higher spin Hall conductivity and/or newlinefruitful for spin-orbit torque applications, which are also analyzed and discussed.