Analytical modeling and simulation of dual material surrounding gate junctionless mosfets considering short channel effects

Abstract

Silicon-on-insulator (Silicon-on-insulator (SOI) technology has been the precursor of the CMOS technology within the last decade providing excellent CMOS devices with many superiorities that minimize the second-order effects for VLSI applications. Several device structures are reported to handle the threat of short channel effects (SCE) and better execution for deep submicron VLSI integration. The modeling of MOSFET is affected by various short channel effects. Double Material Surrounding Gate (DMSG) structure offers another approach for synchronous SCE suppression and enhances the device performance by careful management of the fabric work performance.Surrounding Gate structures are one of the most promising structures beyond bulk CMOS. There is a need for developing suitable analytical models to derive the threshold voltage behavior of Surrounding Gate Nanowire MOSFETs in the sub-nanometer regime. This further leads to the development of drain current models and performance analysis of the proposed Surrounding Gatedevices with different geometrical structures, which in turn forms the basic motivation towards this research work. Analytical models would be helpful to produce quick results, along with more insight on the regulation of the device and newlineto permit circuit simulations. The widening of digital technologies just like the silicon chip has given the inspiration to advance MOSFET technology quicker than the other kind of silicon-based semiconductor unit. An enormous superiority of MOSFET is that the chemical compound layer between the gate and the channel prevents DC from free-flowing through the gate, more reducing power consumption and giving a giant input electrical resistance. Digital circuits switch spends most of their time outside the switching region, whereas the analog circuits depend upon MOSFET behavior command exactly within the switching region of operation. newline newline