Analytical modeling and simulation of advanced surrounding gate silicon nanowire transistors

dc.contributor.guide	Balamurugan, N. B.
dc.coverage.spatial	Information and Communication Engineering
dc.creator.researcher	Karthigai Pandian, M.
dc.date.accessioned	2017-03-16T08:49:49Z
dc.date.available	2017-03-16T08:49:49Z
dc.date.awarded	n.d.
dc.date.completed	june, 2015
dc.date.registered	n.d.
dc.description.abstract	Abstract available
dc.description.note	Data not available
dc.format.accompanyingmaterial	None
dc.format.dimensions	30cm.
dc.format.extent	xxiii, 168p.
dc.identifier.uri	http://hdl.handle.net/10603/140365
dc.language	English
dc.publisher.institution	Faculty of Information and Communication Engineering
dc.publisher.place	Chennai
dc.publisher.university	Anna University
dc.relation	149-165
dc.rights	university
dc.source.university	University
dc.subject.keyword	Cylindrical
dc.subject.keyword	Nanowire
dc.subject.keyword	Silicon
dc.subject.keyword	Transistors
dc.subject.keyword	Velocity
dc.title	Analytical modeling and simulation of advanced surrounding gate silicon nanowire transistors
dc.title.alternative
dc.type.degree	Ph.D.