Design and Analysis of A1GaN Gan Based High Electron Mobility Transistor HEMT on Silicon Substrate for High Power RF Applications

dc.contributor.guide	Nirmal D
dc.coverage.spatial
dc.creator.researcher	Raj Kumar J S
dc.date.accessioned	2024-08-16T07:01:43Z
dc.date.available	2024-08-16T07:01:43Z
dc.date.awarded	2024
dc.date.completed	2023
dc.date.registered	2019
dc.description.abstract	newline
dc.description.note
dc.format.accompanyingmaterial	DVD
dc.format.dimensions	A4
dc.format.extent	123 pages
dc.identifier.uri	http://hdl.handle.net/10603/583013
dc.language	English
dc.publisher.institution	Department of Electronics and Communication Engineering
dc.publisher.place	Coimbatore
dc.publisher.university	Karunya University
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Engineering and Technology
dc.title	Design and Analysis of A1GaN Gan Based High Electron Mobility Transistor HEMT on Silicon Substrate for High Power RF Applications
dc.title.alternative
dc.type.degree	Ph.D.