Modeling and Performance Analysis of III V Tunnel Field Effect Transistorusing Gate and Tunnel Junction Engineering

Abstract

Tablets, smartphones, wearable electronics and implanted medical devices such as pacemakers can extend their battery life by utilizing low-power circuits. Transistors nowadays are far more power-efficient than those of the past while still performing well. Bipolar Junction transistors (BJTs) were extensively utilized in analog circuits during the period from the 1950s to the 1970s, particularly in applications such as switches and amplifiers. In the late 1970s, the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) gained significant popularity, particularly in integrated circuits. newlineCMOS technology has been widely used in modern electronics for the past forty years. The scaling of MOSFETs results in an elevation in leakage due to short-channel phenomena such as Drain-Induced Barrier Lowering (DIBL). Even at normal temperatures, the subthreshold slope of the MOSFET exceeds 60 mV/decade. newlineThe short-channel effect in MOSFET can lead to several issues, including decreased device performance, increased leakage current, punch-through, and DIBL. Tunnel field-effect transistors (TFETs) are a particular kind of transistor that operate differently from conventional transistors because they rely on notions related to quantum mechanical tunneling. The term quottunnelingquot refers to the process by which particles traverse through TFETs, namely via ultrathin oxide layers or heterojunctions. TFET is a preferable solution over MOSFET newline