Fabrication of Mos2 Thin Film Heterostructures and Investigation of Thermoelectric Properties for Waste Heat Recovery

Abstract

Chapter 1 deals with a brief introduction to thermoelectric, which contains newlinehistory, development, basics of concepts and parameters which have been addressed by newlineseveral kinds of strategies to overcome. In addition, the advantages of thin film TEs of newlineboth flexible and rigid thermoelectric. Materials choice, literature review strategies to newlineimprove and progress of MoS2-based thermoelectric materials and also the experimental newlineand theoretical results. The last section describes the significant objectives, scope and newlineuniqueness of the present thesis work. newlineChapter 2 explains the fabrication of MoS2 films by Atmospheric Pressure newlineChemical Vapor Transport technique and doctor blade method followed by newlinethermoelectric measurements. The basic characterization of vibrational study, newlinemorphology, and chemical state analysis was described. The charge carrier and mobility newlinewere measured by the Hall measurement. The thermoelectric parameters of electrical newlineconductivity and Seebeck coefficient were examined by the Advanced Riko ZEM-3 newlineseries instrument. newlineChapter 3 describes the optimization of MoS2 growth by the Atmospheric newlinePressure Chemical Vapor Transport (APCVT) method. To obtain a continuous film, the newlinedifferent annealing temperatures (800 °C and 900 °C) with various time (10 and newline20 min) were attempted. Initially, all the fabricated films observed a non-continuous newlinegrowth of thin films, the growth often leads to even or incomplete layers, results in poor newlineconductivity and also challenges to achieve good Ohmic contacts. After several newlineoptimizations in the growth process, the MoS2 was formed with continuous growth and newlinemeasured the thermoelectric applications newline