In situ and ex situ investigation of silicon crystal growth computational and experimental approach

Abstract

The growth process of silicon crystals is examined in this thesis by newlinecomputational and experimental techniques. Growth conditions are predicted newlineand optimized by computational simulations, and these models are supported newlineby actual data from experimental research. The primary objective of the newlineresearch is to increase our understanding of silicon ingot growth and solar cell newlineefficiency. newlineUsing solar PV technology as the focus, Chapter 1 examines the energy newlineneeds of modern civilization and assesses a range of energy sources. The newlineprocesses for silicon crystal growth are addressed with a focus on the value of newlineboth in-situ and ex-situ analyses in maximizing the effectiveness and quality of newlinesolar panels. newlineIn Chapter 2, an in-situ observation system is used to examine the newlinedynamics at the melt/crystal interface during the formation of mc-Si ingots at newlinevarying concentrations of germanium co-dopant. The study provides new newlineinsights for ingot production optimization by demonstrating that the newlineconcentration of Ge has a considerable impact on the interface dynamics newlinewithout affecting solidification integrity. newlineIn Chapter 3, an in-situ observation system is used to study the newlinedirectional solidification of crystalline silicon doped with boron under various newlineconditions, both with and without co-dopants such as gallium and tin. newline