Growth and study of optoelectronic properties of a si h nc si h based superlattice structures

Abstract

Multilayer superlattice structures of a Si H nc Si H show many interesting features such as enhanced carrier mobility and enhance photosensitivity etc Superlattice structures based on amorphous layer have also been proposed as a novel transistor Though a Si H nc Si H superlattice structures show many interesting properties the main challenge in superlattice structures based electronic devices is the interface states These interface states between the sublayers act as recombination centers t