Study of electrical and structural properties of metal contacts on gallium nitride

dc.contributor.guide	Rajagopal Reddy, V
dc.coverage.spatial	Electronics
dc.creator.researcher	Ramesha Reddy, N
dc.date.accessioned	2016-05-24T10:47:35Z
dc.date.available	2016-05-24T10:47:35Z
dc.date.awarded	n.d.
dc.date.completed	2007
dc.date.registered	n.d.
dc.description.abstract	Abstract available newline newline
dc.description.note	-
dc.format.accompanyingmaterial	DVD
dc.format.dimensions	-
dc.format.extent	xii, 111p.
dc.identifier.uri	http://hdl.handle.net/10603/91949
dc.language	English
dc.publisher.institution	Department of Electronics
dc.publisher.place	Mysore
dc.publisher.university	University of Mysore
dc.relation	-
dc.rights	university
dc.source.university	University
dc.subject.keyword	GaN material system, Metal-semiconductor, Schottky-Mott model, Electron beam, Rapid thermal annealing
dc.title	Study of electrical and structural properties of metal contacts on gallium nitride
dc.title.alternative	-
dc.type.degree	Ph.D.