Development and optimization of advanced high efficiency perc solar cells through process and device simulations

Abstract

Silicon-based photovoltaic (PV) technology is considered the most favorable approach that has received great consideration worldwide to possibly meet the ever-growing needs for energy. Silicon based passivated emitter and rear cells (PERC) are promising contenders for mass production in the PV industry. Although an extensive work is being carried out on PERC solar cells, conversion efficiencies are still far away from the theoretical Auger limit of 29.4% for c-Si solar cells. The major limiting factors identified for this difference are the resistive and recombination losses within the emitter region. The formation of emitter region in PERC solar cells is done using two different methods, (i) ion-implantation and (ii) POCl3 diffusion. Implant technology for the formation of emitter has several advantages in terms of short process time, compatible with batch process, low thermal budget, superior homogeneity and reproducibility of doping profile. Various dielectric materials, metals and resist can be used for masking and implantation through thin layers is also possible. In addition, implant dose and energy also allow the control over implanted ions, doping concentration and penetration depth. newline