Analytical modeling and simulation of gate material and channel engineering of DG Strained Si MOSFET with interface charges

dc.contributor.guide	Rao, N. Bheema
dc.coverage.spatial
dc.creator.researcher	Rao, Suddapalli Subba
dc.date.accessioned	2022-12-17T02:27:16Z
dc.date.available	2022-12-17T02:27:16Z
dc.date.awarded	2021
dc.date.completed	2021
dc.date.registered
dc.description.abstract	newline
dc.description.note
dc.format.accompanyingmaterial	None
dc.format.dimensions
dc.format.extent	xviii, 105 p.
dc.identifier.uri	http://hdl.handle.net/10603/425968
dc.language	English
dc.publisher.institution	Department of Electronics and Communication Engineering
dc.publisher.place	Warangal
dc.publisher.university	National Institute of Technology (NIT), Warangal
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	CMOS technology
dc.subject.keyword	Engineering
dc.subject.keyword	Engineering and Technology
dc.subject.keyword	Non-conventional field effect
dc.subject.keyword	TCAD simulations
dc.title	Analytical modeling and simulation of gate material and channel engineering of DG Strained Si MOSFET with interface charges
dc.title.alternative	Analytical modeling and simulation of gate material and channel engineering of DG Strained-Si MOSFET with interface charges
dc.type.degree	Ph.D.