Simulation studies of Multi quantum well GaN InGaN based light emitting diodes for enhanced device performance

dc.contributor.guide	Arivuoli, D
dc.coverage.spatial	Science and Humanities
dc.creator.researcher	Robidas, Dipika
dc.date.accessioned	2017-11-16T06:12:57Z
dc.date.available	2017-11-16T06:12:57Z
dc.date.awarded	n.d.
dc.date.completed	2016
dc.date.registered	n.d.
dc.description.abstract	Abstract available
dc.description.note	Data not available
dc.format.accompanyingmaterial	None
dc.format.dimensions	30cm.
dc.format.extent	xlvi, 194p.
dc.identifier.uri	http://hdl.handle.net/10603/181247
dc.language	English US
dc.publisher.institution	Faculty of Science and Humanities
dc.publisher.place	Chennai
dc.publisher.university	Anna University
dc.relation	168-191
dc.rights	university
dc.source.university	University
dc.subject.keyword	Device
dc.subject.keyword	Enhanced
dc.subject.keyword	Multi
dc.subject.keyword	Quantum
dc.subject.keyword	Simulation
dc.title	Simulation studies of Multi quantum well GaN InGaN based light emitting diodes for enhanced device performance
dc.title.alternative
dc.type.degree	Ph.D.