Design and development of double perovskite ferroelectric based temperature sensor
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Abstract
The double perovskite ferroelectric materials are gaining significant research interest
newlinein the current scenario due to the aspiration for development of capacitive
newlinetemperature sensors on account of inherent characteristic with higher mechanical,
newlinechemical and thermal stability. Despite significant advancements in solid state
newlinescience and technology, a much-awaited scientific breakthrough is indispensable for
newlinethe development of a novel eco-friendly ferroelectric material with stronger
newlinetemperature dependent permittivity along with lower tangent loss for formulation of
newlinecapacitive temperature sensor intended for high temperature industrial applications.
newlineAn elegant solution to this is the assortment, development and fabrication of different
newlinelead free bismuth based double perovskite compounds (A2BBand#8242;O6 type) through proper
newlinechoice of the metal ion B (manganese Mn4+) and Band#8242; transition metal ions (either,
newlinenickel Ni2+, cobalt Co2+, ferrous Fe2+, and cadmium Cd2+), which would offer a
newlinegigantic opportunity for path-breaking device modernization. In order to delineate the
newlineeminence of the synthesized solid solutions and validate the propensity of the
newlinecompound for capacitive temperature sensor various structural, morphological,
newlineelectrical properties with structure-property acquaintances, dielectric behavior, loss
newlinetangent, impedance, resistive, conductive, electric modulus, relaxation phenomenon,
newlineferroelectric hysteresis, magneto-electric coupling coefficient, pyroelectric as well as
newlinecapacitive characteristics have been experimentally explored. A comprehensive
newlinecomparison between all the prepared compounds (such as Bi2MnNiO6, Bi2MnCoO6,
newlineBi2MnFeO6 and Bi2MnCdO6) has been accomplished to illustrate the pre-eminence of
newlinethe capacitive specimen as a potential ferroelectric entity with desired properties for
newlinetemperature sensor device design. The temperature sensor is designed based on
newlinecapacitive technology using one of the fabricated lead-free components [Bi2MnNiO6]
newlineas lumped capacitor component. The temperature sensing behavior has been
newline