Low power high speed digital circuit design based on carbon nano tube technology

Abstract

In an era of growing demand for high-performance and energy-efficient electronic devices, newlinethis work explores the cutting-edge domain of low-power, high-speed digital circuit design newlineusing carbon nanotube technology. The increasing need for high-speed, energy-efficient newlinedigital circuits drives the examination of innovative materials and design methods. Carbon newlinenanotubes offer a promising avenue for creating low-power, high-speed digital circuits due newlineto their exceptional electrical properties. newlineThis work presents a comprehensive investigation into the design and implementation of newlinedigital circuits using carbon nanotube field-effect transistors to enhance both speed and newlinepower efficiency. The research introduces novel circuit architectures and optimization newlinestrategies leveraging CNTFETs for superior performance and minimal energy newlineconsumption. Experimental findings validate the approach, demonstrating significant newlinereductions in power dissipation while maintaining circuit speed.The study further evaluates the robustness and scalability of CNT-based digital circuits, newlineemphasizing their potential for future semiconductor technologies. Notably, the work newlinecontributes to advancing low-power, high-speed digital circuit design through the unique newlineproperties of carbon nanotubes. newlineThe analysis also encompasses a comprehensive survey comparing various technologies as newlinepotential CMOS replacements, and a thorough comparison of the transfer and drain newlinecharacteristics of CNTFETs and traditional MOSFETs. The results reveal superior newlineperformance of CNTFETs over MOSFETs. newlineFinally, the proposed CNTFET 32x32 SRAM array, featuring row and column decoders, newlineSRAM cells, sense amplifiers, and write driver circuits, outperforms existing systems with newlineimprovements of 98.41% in write delay, 97.15% in read delay, and 62% in total power newlinedissipation. These advancements suggest that the CNTFET 32x32 SRAM array could serve newlineas a promising alternative to CMOSFET memory arrays. newline