Design and performance analysis of low power spin transfer torque ram using modified low swing flip flop

Abstract

Memory is one of the most important defining components used in every computer system, storage solution, and mobile device in existence today. Performance, scalability, reliability, and the raw cost of memory are major criteria in determining the economic success or failure of each system product brought to market. New disruptive technology challengers are coming into the market, specifically Non-Volatile Memories (NVM) such as Resistive Random Access Memory (RRAM) and Phase-Change RAM (PCRAM) that promise high performance, low power consumption, and unlimited endurance. Magnetic RAM (MRAM) is one of these emerging technologies. There are now a few different types of MRAM being deployed today, including field-switching and heat-assist MRAM. Spin-Transfer Torque (STT-MRAM) does not require a power-refresh like DRAM, and the read process is not destructive. This situation provides a significant power advantage, as well as lower latency at the system level. All have distinguishing characteristics, making the technology useful for different kinds of niche applications. newlineSpin-Transfer Torque (STT) RAM, however, is well suited for many mainstream applications, particularly as a storage technology, Magnetic Flip-Flops (MFF) consumes more power and static current dissipation due to conditional based single circuitry which can be optimized by introducing MFF with the combination of low swing conditional capture edge-triggered flip-flop, self time logical writing circuit and Coarse Grain method based power gating circuit newline