Pulsed laser deposition of 2D transition metal dichalcogenides thin films and heterostructures for thin film transistor and memristor applications

Abstract

Two dimensional (2D) materials have brought a revelation in newlinescientific research owing to their excellent chemical, mechanical, electrical newlineand optical properties, making them a strong candidate for various device newlineapplications. Among the family of 2D materials, graphene is the most popular newlineand widely used 2D material owing to its outstanding properties. But the newlineabsence of intrinsic bandgap limits the use of graphene on switching device newlineapplications. The search for novel 2D materials similar to graphene has newlinetriggered exploration of a wide range of materials such as transition metal newlinedichalcogenides (TMDs). Among the TMDs, 2D MoS2 emerged as promising newlinesemiconducting material by virtue of it extraordinary properties such as high newlinemobility, high flexibility, high breaking strength and low power consumption. newlineMoS2 also exhibits both direct (~1.9 eV) and indirect (1.2 eV) bandgaps newlinecorresponding to monolayer and bulk forms, making it an encouraging newlineprospect for efficient nanoelectronic and optoelectronic devices. newline