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B S Abdur Rahman Crescent Institute of Science & Technology
Department of Physics
Investigation on Ferroelectric Polarization Based Resistive Switching Random Access Memory ReRAM Devices
Investigation on Ferroelectric Polarization Based Resistive Switching Random Access Memory ReRAM Devices
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10.list of figures.pdf
(220.39 KB)
11.list of symbols and abbreviations.pdf
(97.38 KB)
1.front page.pdf
(112.3 KB)
4. declaration by the research scholar.pdf
(263.01 KB)
6. acknowledgement.pdf
(185.27 KB)
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http://hdl.handle.net/10603/482462
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Department of Physics
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