Analysis and Reliability Assessment of Non isolated DC DC Converters

Abstract

The rapid evolution of power electronics has driven the need for more efficient and newlinereliable DC-DC converters, especially in applications requiring high switching newlinefrequencies and power density. Traditional Silicon (Si)-based semiconductor devices, newlinewhile widely used, face limitations in performance, particularly in terms of efficiency, newlinepower losses, and thermal management. The advent of materials with wide band gaps, newlineincluding GaN and SiC, presents viable alternatives. This study explores how WBG newlinedevices can strengthen the performance of non-isolated DC-DC converters. Additionally, newlinethis work provides crucial design and analysis guidelines, paving the way for the next newlinegeneration of power conversion technologies. newlineThis thesis presents a comprehensive analysis, design, and control of non-isolated newlineDC-DC converters, with a focus on the potential benefits of employing advanced newlinesemiconductor technologies, including GaN and SiC. In order to start the investigation, newlinethe design of a 24V to 12V, 1A Buck converter and a 12V to 24V, 2A Boost converter newlineusing Silicon (Si) devices have been assessed. Detailed analyses of the converter s newlineperformance have been conducted under various operating conditions, including different newlineswitching frequencies, load currents, and input voltages. The use of PID control strategies newlinehas been employed to improve voltage regulation and system stability. These analyses newlinehave been carried out at switching frequencies of 100 kHz and 500 kHz. In addition, the newlinethesis provides generalized guidelines for inductor design in transformerless DC-DC newlineconverters, employing the Area Product Technique (APT) to evaluate inductance and its newlineimpact on overall performance. Power loss mechanisms, including conduction, switching, newlineand passive component losses, have been modelled and evaluated. newline