Performance Analysis of Homo and Hetero Junction Based Double Gate Tunnel Field Effect Transistor for Radiation Hardening and Mixed Signal Applications

Abstract

The development of VLSI technology is directed towards the miniaturization of semiconductor devices, which have taken a significant position in modern integrated circuits (ICs). With the technology scaling, it is extremely difficult to operate these devices due to various shortcomings such as short channel effects. The miniaturization of the device is thus made possible by creating new structures and exploiting new current transport mechanism. Tunnel field effect transistors (TFETs) utilizing band-to-band tunneling as the current transport mechanism have been identified as a promising alternative to MOSFET for low power applications. Though TFET is a potential candidate for digital applications, analog circuits are still unavoidable in many applications. In this research work, TFET is investigated with respect to both device and circuit level simulations that could be suited for mixed signal applications. This study can be divided into following five sections (i) The effect of structural parameter variations on RF performance metrics, unity gain cut-off frequency (ft) and maximum oscillation frequency (fmax) for Si and SiGe based single material double gate (SMDG) and dual material double gate (DMDG) TFETs (ii) The soft error sensitivity of TFET SRAM cell and the mitigation technique for the data recovery (iii) The comparison study on stability and power dissipation of homo and hetero-junction based TFET SRAM cells (iv) The performance analysis of static and dynamic adiabatic inverter circuits employing homo and hetero-junction based DG TFETs (v) The performance analysis of homo-junction (InAs) and hetero-junction (GaSb-InAs) based independent gate (IG) TFET RF mixers. The structural parameters considered for Si and SiGe DG TFETs are gate length (Lg), gate oxide thickness (Tox), body thickness (Tch) and underlap (Lun). From the qualitative perspective, the influence of structural parameter variations have been performed on RF metrics for Si and SiGe DG TFETs. The reduction in tox offers more ft in Si and SiGe bas