Metal Oxide Nanomaterial Based Hybrid Devices for Memory Application

Abstract

A memory device is an object that is used to store information and prevent it from newlinevanishing for millions of years. Over the last three decades, significant progress in newlineconventional memory technology and storage hierarchy has been met with problems newlinein the design of large-scale, high-performance systems. With the rising demand for newlinehigh-density digital information storage and the approach to integration limit, this new newlineera of innovation has further pushed the quest for novel memory methods to acquire newlinefresh impetus. There is a huge effort going on throughout the world to develop new newlinememory devices with non-volatile technology that can integrate the finest features of newlinefuture technologies like artificial intelligence, big data, cloud computing, Inter of newlineThings etc. Many novel non-volatile technologies (NVM) like Phase Change Random newlineAccess Memory (PCRAM), Magnetic Random Access Memory (MRAM), newlineFerroelectric Random Access Memory (FeRAM), Resistive Random Access Memory newline(RRAM) have recently been developed to fulfil the demand for memory systems in newlinethis digital age. newlineAmong the different NVM technologies RRAM stands out as one of the most newlinepromising memory technologies as it can offer all the necessary traits required by newlinefuture memory devices. RRAM is a two-terminal device wherein an active material newline(resistive switching material) is sandwiched between two electrodes, the resistive state newlineof the device can be switched from a high resistance state to low resistance depending newlineon the magnitude and polarity of the applied voltage. Numerous materials have been newlinereported that can be used as an active layer for resistive switching studies such as newlinemetal-oxide nanomaterials, metal nanoparticles, carbon nanotubes, graphene, newlinequantum dots, perovskites, polymers etc. The RRAM memory devices based on the newlineorganic-inorganic hybrid is of great interest as they offer varied advantages like newlinesimple device fabrication, low cost, processing at low temperature, flexible, newlineconsidered to be a promising candidate for next-generation electronics. newlineThis thesi