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Department of Electronics & Communication Engineering
Design and Analysis of Gate Stack Silicon Doped HfO2 Ferroelectric Vertical TFET for low power application
Design and Analysis of Gate Stack Silicon Doped HfO2 Ferroelectric Vertical TFET for low power application
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01_title page.pdf
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02_declaration.pdf
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03_certificates.pdf
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04_acknowledgement.pdf
(122.6 KB)
05_content.pdf
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http://hdl.handle.net/10603/604312
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Department of Electronics & Communication Engineering
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